8205A
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
• RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
Applications
• Battery Protection
• Load Switch
• Power Management
